Field Effect Transistor - Electrical Engineering (MCQ) questions and answers

1.The effective channel length of a MOSFET in saturation decrease with increase in

A. Gate voltage
B. Drain Voltage
C. Source voltage
D. Body voltage

2.The voltage gain of a given common source JFET amplifier depend on its

A.Input impedance
B. Amplification factor
C.Dynamic drain resistance
D. Drain load resistance

3. The threshold voltage of an n-channel MOSFET can be increased by

A. Increasing the channel doping concentration
B. Reducing the gate oxide thickness
C.Reducing the channel doping concentration
D.Reducing the channel length

4. As compare to POWER MOSFET, a BJT has

A. LOWER switching losses and HIGHER conduction loss
B. HIGHER switching losses and LOWER conduction loss
C.HIGHER switching losses and HIGHER conduction loss
D.LOWER switching losses and LOWER conduction loss

5.Which of the following pair is NOT correctly matched?

A. IGBT-voltage device
B.MOSFET-high on state conduction power loss
C.MOSFET-Unipolar device
D. BJT-low switching power loss

6.The control Parameter of JFET is

A.Gate current
B.Drain control
C. Source control
D. Gate control

7. Secondary breakdown occur in

A. BJT but bot in MOSFET
B. MOSFET but not in BJT
C. Both MOSFET and BJT
D.None of these

8.A properly biased JFET will act as a

A. Current controlled current source
B.Voltage controlled voltage source
C.Voltage controlled current source
D. current controlled voltage source

9.What kind of device is FET?

A. Unipolar transistor
B. Non-Semiconductor
C. Biploar semiconductor
D.Insulator

10.As compared to FET,BJT has _______input impedance and ______ output impedance:

A. Low,High
B.High,High
C.Low,Low
D. High,Low